A graduate-level description of recent Japanese research on the chemistry of amorphous silicon film deposition associated with plasma CVD, a step in producing amorphous semiconductors. Reports on studies (of microscopic processes of gas-phase reaction as well as chemical reactions on the film growing surface) designed to elucidate the relationship between deposition conditions and the structure of resultant films. Also presents experimental results on structural, optical, and electronic phenomena of the material, which have been obtained using several new techniques developed at the Agency of Industrial Science and Technology, where seven of the ten authors work. No index. Annotation copyright Book News, Inc. Portland, Or.
